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| NEW PRODUCT Silicon photo transistor KDT5001A Description The KDT5001A is high sensitivity silicon photo transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features - Higly sensitive photo transistor. - Chip On Board package. - High speed response. Application - AV Instrumemts. - Touch panels for ATM & FA epuiments. - Optical counter Outline Dimensions Pin Description EMITTER COLECTOR ELECTRO- OPTICAL CHARACTERISTICS Description Dark Current Photo Current Spectral Sensitivity Peek wavelength Viewing Angle Collector-Emitter Saturation Voltage 2 p 1/2 [Ta= 25 ] Symbol ICEO IPCE Condition VCE=10V, EE=0 VCE=5V, EE=0.5mW/cm2 PK=640nm Min. 1.2 Typ. 500~1050 Max. 100 2.4 Unit nA mA nm nm VR=0V 20 IC=100 , E E=0.5mW/cm2, PK=640nm - 880 40 200 deg. mV VCE(SAT) 1/1 Issued Date : Feb. 2006 |
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